Reciprocal space mapping of GaN_xAs_1-x grown by RF plasma-assisted solid source molecular beam epitaxy

摘要

We present the change in diffused scattering intensity and crystal truncation rod in X-ray reciprocal space mapping (RSM) of GaN_xAs_1-x grown by a radio frequency (RF) nitrogen plasma source in a solid source molecular beam epitaxy system. The RSM results are discussed in relation to variation in the low-temperature photoluminescence (PL) efficiency and peak energy. The X-ray RSM plots were recorded using a high-resolution triple-axis X-ray diffractometer on GaNAs samples annealed from 550 to 800 deg C.