Nucleation and ripening of seeded InAs/GaAs quantum dots

摘要

We have investigated the nucleation and ripening of pairs of InAs/GaAs quantum dot layers separated by thin (2- 20 nm) GaAs spacer layers. Reflection high energy electron diffraction (RHEED) measurements show that the 2D-3D transition in the second layer can occur for less than 1 monolayer deposition of InAs. Immediately after the islanding transition in the second layer chevrons were observed with included angles as low as 20° and this angle was seen to increase continuously to 45 ± 2° as more material was deposited.