Monte Carlo modeling of X-valley leakage in quantum cascade lasers

摘要

This paper presents the first comprehensive Monte Carlo simulation of GaAs/AlGaAs quantum cascade lasers (QCLs) that takes both Γ- and X-valley transport into account and investigates the effect of X-valley leakage on the QCL performance. Excellent agreement with experimental data is obtained for the GaAs/Al_(0.45)Ga_(0.55)As QCL at cryogenic and room temperatures. The model reveals two carrier-loss mechanisms into the X valley: coupling of the Γ continuum-like states with the X states in the same stage, and coupling between the Γ localized states in the simulated stage with the X states in the next stage. Simulation results demonstrate that the 45% Al QCL has small X-valley leakage at both 77 K and 300 K, due to the very good confinement of the Γ states, stemming from the high Al content.