NEGF simulation of the RTD bistability

摘要

The simulation of Ⅰ-Ⅴ characteristics of Al_(0.3)Ga_(0.7)As-GaAs and AlAs-GaAs resonant tunneling diodes (RTD) is presented. The nonequilibrium Green function (NEGF) based 1D quantum transport simulator Wingreen is used in our case. The plateau region on the Ⅳ characteristics usually present only by the Wigner function equation (WFE) based simulation appeared now by the NEGF simulation of our AlAs-GaAs RTD and its shape is comparable with our experimental measurements. Analysis of our results from point of view of the scattering and geometrical parameters of the RTD structure is presented.