Doping of SiGe core-shell nanowires

摘要

Dopant deactivation in pure Si and pure Ge nanowires (NWs) can compromise the efficiency of the doping process at nanoscale. Quantum confinement, surface segregation and dielectric mismatch, in different ways, strongly reduce the carrier generation induced by intentional addition of dopants. This issue seems to be critical for the fabrication of high-quality electrical devices for various future applications, such as photovoltaics and nanoelectron-ics. By means of Density Functional Theory simulations, we show how this limit can be rode out in core-shell silicon-germanium NWs (SiGe NWs), playing on the particular energy band alignment that comes out at the Si/Ge interface. We demonstrate how, by choosing the appropriate doping configurations, it is possible to obtain a 1-D electron or hole gas, which has not to be thermally activated and which can furnish carriers also at very low temperatures. Our findings suggest core-shell NWs as possible building blocks for highspeed electronic device and new generation solar cells.