Incoherent transport in NEMO5: realistic and efficient scattering on phonons

摘要

In this work, the coherent and incoherent transport simulation capabilities of the multipurpose nanodevice simulation tool NEMO5 are presented and applied on transport in tunneling field-effect transistors. The comparison with experimental resistivity data confirms the validity of NEMO5's phonon-scattering models. Common pitfalls of numerical implementations and the applicability of common approximations of scattering self-energies are discussed. The impact of phonon-assisted tunneling on the performance of TFETs is exemplified with a concrete Si nanowire device. The communication-efficient implementation of self-energies in NEMO5 is demonstrated with a scaling comparison of self-energies solved with blocking and nonblocking MPI-communication.