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H-ion-sensitive FET macromodel in LTSPICE IV

机译:LTSPICE IV中的H离子敏感FET宏模型

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摘要

pH measurements are widely used in biomedical engineering, agriculture, environmental studies, the food industry, etc. In biomedical and healthcare research, it is said that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of wound healing or susceptibility, diagnosis of diseases, cellular internalization, etc. The ion-sensitive field-effect transistor (ISFET) in blank form is capable of pH measurements. When its gate comes into contact with an electrolyte, the activity of ions dissolved in the electrolyte is converted to an electrical potential while releasing free electrons. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. LTSPICE IV is a computational electronic design software package that facilitates design and simulation of circuits before their costly fabrication. Despite its popularity, the ISFET is still not available in the component library of LTSPICE IV. Hence, we propose herein an ISFET macromodel to contribute as a new subcircuit block for the LTSPICE IV component library, to enable design of ISFET-based sensors or microsystems. A mathematical model for the ISFET is first derived and programmed into netlists, from which a macromodel is constructed. This ISFET macromodel is tested by using it to generate characteristic graphs relating important ISFET parameterization variables. Simulation results show that, at low pH, when the H ion concentration in the electrolyte is high, higher drain current is generated, similar to the results of the mathematical model. As a consequence, from the simulation of the drain current with respect to a reference voltage, at higher pH values the first-order response is found to be more sluggish with slow turn-on of the drain current. Moreover, the drain voltage is found to suppress the sensitivity (reference threshold voltage/pH) of the ISFET. According to the simulations of the drain current and pH, reference voltages of 1.0 and 1.5 V result in high linearity and sensitivity. According to the simulations of the drain current and drain voltage, a reference voltage of 1.5 V is found to be good in terms of operational linearity and sensitivity.
机译:pH值测量广泛用于生物医学工程,农业,环境研究,食品工业等。在生物医学和医疗保健研究中,据说所有水性样品都在其生命周期的某个时刻进行了pH测试,以评估伤口的愈合或敏感性。 ,疾病诊断,细胞内化等。空白形式的离子敏感场效应晶体管(ISFET)能够进行pH测量。当其栅极与电解质接触时,溶解在电解质中的离子的活性会转换为电位,同时释放出自由电子。 ISFET的这种使用已变得普及,因为它允许将传感,预处理和计算电路封装在单个芯片上,从而实现了小型化和便携性。 LTSPICE IV是一种计算电子设计软件包,可在电路制造成本高昂之前促进电路的设计和仿真。尽管它很受欢迎,但是LTSPICE IV的组件库中仍然没有ISFET。因此,我们在此提出一个ISFET宏模型,以作为LTSPICE IV组件库的新子电路模块,以实现基于ISFET的传感器或微系统的设计。首先导出ISFET的数学模型并将其编程到网表中,从中构建一个宏模型。通过使用该ISFET宏模型生成与重要ISFET参数化变量相关的特性图来对其进行测试。仿真结果表明,在低pH值下,电解质中的H离子浓度较高时,会产生较高的漏极电流,类似于数学模型的结果。结果,根据漏极电流相对于参考电压的仿真,发现在较高的pH值下,随着漏极电流的缓慢导通,一阶响应变得更加缓慢。此外,发现漏极电压抑制了ISFET的灵敏度(参考阈值电压/ pH)。根据漏极电流和pH的仿真,1.0和1.5 V的基准电压可实现高线性度和灵敏度。根据漏极电流和漏极电压的仿真,在工作线性和灵敏度方面,发现1.5 V的基准电压是良好的。

著录项

  • 来源
    《Journal of Computational Electronics》 |2016年第4期|1407-1415|共9页
  • 作者单位

    Univ Teknol MARA, Pharmaceut & LifeSci Commun Res, Computat Intelligence Detect RIG, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia;

    Univ Teknol MARA, Pharmaceut & LifeSci Commun Res, Computat Intelligence Detect RIG, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia;

    Univ Teknol MARA, Pharmaceut & LifeSci Commun Res, Computat Intelligence Detect RIG, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ISFET; LTSPICE IV; H+ ion; pH;

    机译:ISFET;LTSPICE IV;H +离子;pH;

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