Electron transport properties of electrically doped guanine nano-sheet based bio-Zener diode: a first principle paradigm

摘要

The quantum ballistic transmission properties of an electrically-doped guanine-nanosheet-based bio-Zener diode are investigated using density functional theory and nonequilibrium Green's function-based first-principles calculations. The bio-Zener diode is gate-bias modulated, and its various quantum-electronic properties, for example, the V-I characteristic, the transmission spectra, and the device density of states, depend on both the electrical doping concentration and on the applied gate bias voltage. The junctionless highly doped bio-Zener diode shows high levels of reverse-bias current which is dominated by majority charge carriers. It is also found that, due to the presence of a wide bandgap and the backscattering effect, the forward-bias current is highly suppressed. The quantum simulation results confirm a strong reverse gate-bias-modulated biased current-voltage response as well as a charge transport phenomenon through the effective device region. The bio-Zener diode exhibits a specific reverse breakdown that can be varied from -0.78 to -3.2 V without affecting the forward current-voltage characteristic. The current findings are obtained by including the coherent tunneling and incoherent hopping processes with a minimal Hamiltonian model approach.