High-permittivity dielectric edge termination for vertical high voltage devices

摘要

A novel edge-termination concept using extreme permittivity dielectrics is proposed to effectively manage electric fields in vertical power-devices. This method is expected to be particularly significant for wide band-gap semiconductors, where field termination is a significant challenge due to material and process limitations. Detailed two-dimensional device simulation is used to prove the efficacy of this idea, and to demonstrate that peak electric fields are significantly reduced by this method. We also show an analytical model that gives an intuitive picture into the mechanism of high-permittivity dielectric field plate. Low process complexity and flexibility in the design of power devices can be achieved. We show that junction termination efficiency can be increased from 22.7% (no junction termination) and 50% (conventional field plate) to 73% (high-permittivity-terminated device).