首页> 外文期刊>Journal of Computational Electronics >Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
【24h】

Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

机译:纳米电子仿真软件(NESS):一种灵活的纳米器件仿真平台

获取原文
获取原文并翻译 | 示例
           

摘要

The aim of this paper is to present a flexible and open-source multi-scale simulation software which has been developed by the Device Modelling Group at the University of Glasgow to study the charge transport in contemporary ultra-scaled Nano-CMOS devices. The name of this new simulation environment is Nano-electronic Simulation Software (NESS). Overall NESS is designed to be flexible, easy to use and extendable. Its main two modules are the structure generator and the numerical solvers module. The structure generator creates the geometry of the devices, defines the materials in each region of the simulation domain and includes eventually sources of statistical variability. The charge transport models and corresponding equations are implemented within the numerical solvers module and solved self-consistently with Poisson equation. Currently, NESS contains a drift-diffusion, Kubo-Greenwood, and non-equilibrium Green's function (NEGF) solvers. The NEGF solver is the most important transport solver in the current version of NESS. Therefore, this paper is primarily focused on the description of the NEGF methodology and theory. It also provides comparison with the rest of the transport solvers implemented in NESS. The NEGF module in NESS can solve transport problems in the ballistic limit or including electron-phonon scattering. It also contains the Flietner model to compute the band-to-band tunneling current in heterostructures with a direct band gap. Both the structure generator and solvers are linked in NESS to supporting modules such as effective mass extractor and materials database. Simulation results are outputted in text or vtk format in order to be easily visualized and analyzed using 2D and 3D plots. The ultimate goal is for NESS to become open-source, flexible and easy to use TCAD simulation environment which can be used by researchers in both academia and industry and will facilitate collaborative software development.
机译:本文的目的是提供一种灵活和开源的多尺度模拟软件,该软件由Glasgow大学的设备建模组开发,用于研究现代超缩放的纳米CMOS器件中的电荷运输。这个新模拟环境的名称是纳米电子仿真软件(NESS)。整体NESS旨在灵活,易于使用和可扩展。其主要两个模块是结构发生器和数值求解器模块。结构发生器创建器件的几何形状,在仿真结构域的每个区域中定义材料,并包括最终的统计变异性的来源。电荷传输模型和相应的等式在数值求解器模块内实现并用泊松方程自始终解决。目前,NESS包含漂移扩散,Kubo-Greenwood和非平衡绿色功能(Negf)求解器。 Negf Solver是当前版本的最重要的运输求解器。因此,本文主要专注于NegF方法和理论的描述。它还提供与在NESS中实施的其余运输求解器的比较。 NESS中的NegF模块可以解决弹道极限或包括电子 - 声子散射的运输问题。它还包含志动物模型,以计算具有直接带隙的异质结构中的带状带隧道电流。结构发生器和求解器均在NESS中连接到支持诸如有效质量提取器和材料数据库的模块。仿真结果以文本或VTK格式输出,以便使用2D和3D图来容易地可视化和分析。最终目标是为NESS成为开源,灵活且易于使用的TCAD仿真环境,可以由学术界和工业中的研究人员使用,并将促进协作软件开发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号