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首页> 外文期刊>Journal of Computational Electronics >Performance assessment of TCO/metal/TCO multilayer transparent electrodes: from design concept to optimization
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Performance assessment of TCO/metal/TCO multilayer transparent electrodes: from design concept to optimization

机译:TCO /金属/ TCO多层透明电极的性能评估:从设计概念到优化

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摘要

Versatile multilayer designs based on a transparent conductive oxide (TCO)/metal/TCO structure are proposed to overcome the trade-off between their electrical and optical properties. The overall performance of the investigated multilayer designs based on ZnO/metal/ZnO and indium tin oxide (ITO)/metal/ITO structures is compared based on their Haacke figure of merit (FoM) at X = 550 nm. The influence of both the thickness and position of the inserted silver and gold ultrathin metallic layer (ML) on the electrode FoM is studied. To address the trade-off between transparency and conductivity, a new hybrid approach combining the proposed multilayer designs and particle swarm optimization is conducted. The optimized multilayer design with the ITO/Ag/ITO structure is found to open a new avenue towards the achievement of ultrahigh FoM values of 135 × 10~(-3) Ω~(-1), superior to those found to date, with a high transmittance above 95% and a reduced sheet resistance of 4.7 Ω × sq~(-1). This enhancement can be attributed to the dual effects of the enhanced light management induced by effectively modulating the ML geometry and the reduced sheet resistance. The proposed design methodology therefore bridges the gap between high transparency and low sheet resistance, becoming suitable for use in high-performance optoelectronic applications.
机译:提出了基于透明导电氧化物(TCO)/金属/ TCO结构的通用多层设计,以克服其电气和光学性质之间的折衷。基于X = 550nm的哈卡科的优选(FOM)的Haacke形象进行比较,基于ZnO /金属/ ZnO和氧化铟锡(ITO)/金属/ ITO结构的研究基于ZnO /金属/ ZnO和氧化铟锡(ITO)/金属/ ITO结构的整体性能。研究了插入的银和金超薄金属层(ML)在电极FOM上的厚度和位置的影响。为了解决透明度和电导率之间的权衡,进行了一种结合所提出的多层设计和粒子群优化的新的混合方法。发现具有ITO / AG / ITO结构的优化多层设计,为实现超高FOM值的新大道为135×10〜(-3)Ω〜(-1),优于迄今为止的那些高于95%的高透射率和4.7Ω×Sq〜(-1)的减小的薄层电阻。这种增强可以归因于通过有效调制ML几何形状和薄层电阻而引起的增强光管理的双重效应。因此,所提出的设计方法因此桥接高透明度和低薄层电阻之间的间隙,适用于高性能光电应用。

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