An analytical 3D model for short-channel effects in undoped FinFETs

摘要

An analytical and scalable model for the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term was considered in the 3-D Poisson’s equation to be solved. The threshold voltage is defined as the gate voltage to obtain a certain threshold charge density. Due to its 3-D basis, the model inherently accounts for short-channel effects, such as the threshold voltage roll-off and the Drain Induced Barrier Lowering effect. A very good agreement with 3-D numerical simulations has been observed.