Non-local transport in numerical simulation of GaN LED

摘要

We propose a device modeling theory based on an improved drift–diffusion solution that is suitable for simulation of the efficiency droop effect in GaN LED. Our theory modifies the drift–diffusion transport by adding a non-local carrier transport component that mimics the effect of hot carriers near the multiple quantum well region. The non-local transport model is supported by recent experimental evidence of Auger-induced hot carriers as well as explaining the experimental low turn-on voltage that conventional drift–diffusion theory fails to predict. A surprising finding from the simulation is that the hot-Auger carriers have a positive effect of reducing the junction resistance of the LED and thus help improve the overall wall-plug efficiency.