A Fully-Integrated D-Band Frequency Synthesizer in 0.13-mu m SiGe BiCMOS

摘要

This paper presents a fully-integrated D-band frequency synthesizer (FS) in 0.13-mu m SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler (x 2) and a quadrupler (x 4). The FS generates the D-band output signals from 164.08 to 166.19 GHz. At 166.19 GHz, the measured phase noises (PN) at 100-kHz and 1-MHz offset frequencies are -54.07 dBc/Hz and -72.29 dBc/Hz, respectively. The proposed FS achieves the low power dissipation of around 110mW and the chip area is 2.16 x 0.57mm(2) including all testing pads. The FS has great potential to be used for low-power D-band applications.