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Measurements of the Domain Wall Area-Mobility Product during Slow Flux Reversals

机译:慢通量反转过程中畴壁面积流动性乘积的测量

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摘要

A previous paper has shown that the sides of slow constant-voltage hysteresis loops on polycrystalline tape-wound cores are not smooth; instead the loop sides show irregular, imperfectly reproducible variations. These variations indicate changes in the ease of motion of the so-called transition region (the outward-moving region, formed of moving domain walls, in which the flux is changing). Such changes imply rearrangements of the domain walls within the transition region; and rearrangements of the walls imply changes in their area and mobility. Measurements have been made of a factor K, defined from ec = K(H-Ht), where ec is the induced voltage-per-turn, H is the field applied at the center of the transition region, and Ht is a threshold parameter. K is proportional to the average of the area-mobility product over the walls in the transition region. Using feedback of the induced voltage, K was measured by modulating the applied field H in such a way that the resulting modulation in ec was a small-amplitude square wave. The ratio of the modulation amplitudes in ec and H gave K. This technique, which is similar in principle to Becker''s, has shown that the area-mobility product varies directly with the average rate of flux change and inversely with the level of prior saturation. In the 50-50 Ni-Fe grain-oriented 2-mil tape core for which results are presented, with a prior saturating field of 10 times the coercive force Hc, as the average induced voltage was varied from 1.2 to 20 μv per turn, the mean value of K increased from 8 to 80 μv-per-turn per ampere-turn-per-meter. With the average induced vol-ntage at 1.2, as the prior saturating field was increased from the vicinity of the coercive force to 2Hc, K dropped from 14 to 9, then remained constant at 8 as HS, the prior saturating field, was increased to 100Hc. It is shown that these results are qualitatively consistent with the results from nonmodulated measurements. It is also shown that the number of active domain walls for K = 15 is of the order of 3, if each wall is assumed to be one wrap-of-tape long and if several other drastic assumptions are made.
机译:先前的论文表明,多晶带绕磁芯上的慢速恒压磁滞回线的侧面不光滑。取而代之的是,环面显示出不规则的,不完美的可重复变化。这些变化表明所谓的过渡区域(由移动磁畴壁在其中改变通量的移动畴壁形成的向外移动区域)的运动容易程度发生了变化。这种变化意味着过渡区域内畴壁的重排;墙壁的重新布置意味着其面积和活动性的变化。已经测量了因子,由ec = K(H-Ht)定义,其中ec是每匝感应电压,H是施加在过渡区域中心的磁场,Ht是阈值参数。 K与过渡区域内壁上的区域迁移率乘积的平均值成比例。使用感应电压的反馈,通过调制外加磁场H来测量K,以使ec中的调制为小振幅方波。 ec和H中的调制幅度之比为K。该技术在原理上与Becker相似,已表明面积迁移率乘积随通量平均变化率直接变化,而随通量变化水平成反比。事先饱和。在显示结果的50-50 Ni-Fe晶粒取向2密耳带状磁芯中,由于平均感生电压每匝从1.2到20μv不等,先前的饱和磁场是矫顽力Hc的10倍, K的平均值从每米每安匝每匝8微伏增加到80微伏。当平均感应电压为1.2时,随着先前饱和场从矫顽力附近增加到2Hc,K从14降至9,然后随着先前饱和场HS增加到8保持恒定。 100Hc。结果表明,这些结果与非调制测量的结果在质量上是一致的。还显示出,如果假设每个壁的长度为一个卷带长度,并且进行了其他一些激烈的假设,则对于K 1 =φ15而言,有效畴壁的数量约为3。

著录项

  • 来源
    《Journal of Applied Physics 》 |1961年第3期| 共2页
  • 作者

    Brownell R. M.; Barker R. C.;

  • 作者单位

    Department of Electrical Engineering, Yale University, New Haven, Connecticut;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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