Photoinduced Discharge Characteristics of Amorphous Selenium Plates

摘要

A theoretical model is developed to account for the observed photoinduced discharge characteristics of amorphous selenium plates. This model takes into account not only the bulk trapping of the mobile carriers, but also the recombination of the photogenerated holes and electrons, the effect of which has been neglected in other earlier models. The selenium hole trapping range and recombination lifetime are determined from the present result to be 8×10-8 cm2/V and about 10-9 sec and are consistent with values obtained by using pulse techniques. This suggests that the present work has led to a new method for estimating these two parameters of a photoconductor.