Contribution of Line Defects to the Parasitic Paramagnetism in the Approach to Magnetic Saturation

摘要

For one‐dimensional plane defects, a parasitic paramagnetism is obtained if in the near vicinity of each defect there are defects of opposite sign. The two‐dimensional problem of a line defect surrounded by defects of opposite sign, is approached by assuming that the transverse magnetization vanishes on a certain circle around the defect. For such a model one obtains a magnetic hardness term, when the radius of the circle is large compared to the fall‐off distances of the disturbance in the material. For a radius much smaller than the fall‐off distances, a parasitic paramagnetism term is obtained, with apparent reduction in the saturation magnetization value.