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首页> 外文期刊>Journal of Applied Physics >Control of Properties of Magnetic Thin Films for Shifting Registers
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Control of Properties of Magnetic Thin Films for Shifting Registers

机译:移位寄存器的磁性薄膜的特性控制

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摘要

The operation of a domain wall motion shifting register depends on the fact that the critical threshold field Hs, required to introduce a reverse domain into a saturated, uniaxial, anisotropic, magnetic thin film is greater than the critical threshold field H0, required to move walls of already exiting domains. Thus, an important parameter characterizing the performance of the register is the nucleation factor η defined as η=Hs/H0. This must be large to obtain wide tolerance in the shifting field, H, as H0≤H≤Hs. It must also be large in order to obtain high speed, as wall velocity varies as H - H0. Normally it is difficult to produce films with η≫2, but here it is shown how the difficulty can be overcome by the use of thick films (≫2000 Å) of high anisotropy (anisotropy field Hk≫15 Oe. Experimental results are given for Ni‐Fe‐Co alloys showing that Hs and Hk both increase with the cobalt concentration, whereas H0 decreases with increasing film thickness. Hence the two fields Hs and H0 can be controlled independently, and in this way values of η of up to 12 have been obtained. The ratio of nickel to iron is adjusted for zero magnetostriction. Measurements were made by observation by the Kerr effect of domains in an actual shifting register. There is a tendency for domains to nucleate at the edges of the film when shifting fields are applied, the nuclei growing to represent spurious information. It is shown how this is prevented by gradually reducing the thickness of the film at the edges. When domains are propagated along the film another difficulty is observed, that occasional remanent nuclei from the trailing edge walls remain unshifted, and grow during subsequent shifting cycles, to represent spurious information. It is shown that this-n can be prevented by applying a biassing field of about 1 Oe which tends to erase the remanent nuclei. Also, when the shifting fields are readjusted to operate with the bias field the effect is further enhanced. However, this field reinforces the demagnetizing field of the domains and so causes them to break up into narrow bars in order to reduce their total field energy. This break up reduces the magnetic flux which can be detected by the output sense conductor. When either a thicker film is used to increase the output signal, or the register is reduced in size to increase the operating speed, the effect of the demagnetizing field is accentuated and the domains become very narrow in the hard direction. This effect can be reduced by using a film with a higher value of H0. Shift registers with a packing density of 40 bits/in., cycle time of 1 μsec, shifting fields of about 14 Oe, and biasing fields of about 1 Oe have been produced.
机译:畴壁运动移位寄存器的操作取决于以下事实:将反向畴引入饱和的单轴各向异性磁性薄膜所需的临界阈值场Hs大于移动壁所需的临界阈值场H0。已经存在的域。因此,表征寄存器性能的重要参数是成核因子η,其定义为η= Hs / H0。当H0≤H≤Hs时,该值必须很大才能在移位字段H中获得宽容差。为了获得高速度,它还必须很大,因为壁速度会随H-H0的变化而变化。通常很难生产出具有η≫2的薄膜,但在此说明了如何通过使用具有高各向异性(各向异性场Hk≫15 Oe)的厚膜(≫2000Å)来克服这一困难。 Ni-Fe-Co合金表明,Hs和Hk均随钴浓度的增加而增加,而H0随膜厚的增加而减小,因此可以独立控制两个场Hs和H0,这样η值最大为12调整镍与铁的比例,使磁致伸缩为零,通过实际移位寄存器中的畴的Kerr效应观察来进行测量,当出现偏移场时,畴在膜的边缘会成核。应用表明,原子核不断增长以代表虚假信息,这表明如何通过逐渐减小边缘的膜厚度来防止这种现象,当畴沿膜传播时,观察到另一个困难,即偶然发生后缘壁的剩余核保持不变,并在随后的转变周期中增长,以表示虚假信息。结果表明,可以通过施加一个大约1 Oe的偏置场来防止此-n的存在,该偏置场倾向于擦除剩余的原子核。而且,当重新调整移位场以与偏置场一起操作时,效果进一步增强。但是,该磁场增强了磁畴的退磁磁场,因此使它们分解为窄条,以减小其总磁场能量。这种分裂减小了可被输出感测导体检测到的磁通量。当使用较厚的薄膜来增加输出信号,或者减小寄存器的大小以提高工作速度时,退磁场的影响会加重,磁畴在硬方向上会变得非常狭窄。通过使用具有较高H0值的薄膜可以降低这种效果。已经产生了具有40比特/英寸的填充密度,1微秒的循环时间,大约14Oe的移位场和大约1Oe的偏置场的移位寄存器。

著录项

  • 来源
    《Journal of Applied Physics》 |1964年第3期|共2页
  • 作者

    Tickle A. C.;

  • 作者单位

    International Computers and Tabulators (Engineering) Limited, Gunnels Wood Road, Stevenage, Herts, England;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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