Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si

摘要

Transmission electron microscope examinations of silicon single crystals, phosphorus‐diffused at low temperatures from anodic oxide films as phosphorus sources, showed the presence of crystallographically oriented precipitate. X‐ray and electron diffraction investigations of SiP and SiAs single crystals prepared by a vapor‐growth method revealed the orthorhombic crystal structure of the as‐grown compounds. Using these structure data, the precipitate in the diffused silicon could be identified by electron diffraction as SiP. The orientation relationship SiP‐precipitate/Si‐matrix was determined.