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首页> 外文期刊>Journal of Applied Physics >Magnetization of Synthetic Filamentary Superconductors. A. The Dependence of Flux Jumping on Temperature and Magnetic Field Sweep Rate
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Magnetization of Synthetic Filamentary Superconductors. A. The Dependence of Flux Jumping on Temperature and Magnetic Field Sweep Rate

机译:合成丝状超导体的磁化。 A.磁通跳跃对温度和磁场扫描速率的依赖性

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摘要

Synthetic high‐field superconductors have been prepared by impregnating porous glasses of various pore size with indium, using pressures up to 70 000 psi. The magnetic field Hfi at which the first flux jump occurred in the initial magnetization of the sample was measured as a function of temperature T and magnetic field sweep rate dH/dt. Values of dH/dt between 24 and 375 Oe/sec were used. For a given value of dH/dt, Hfi increased initially as T was lowered, reached a maximum, and finally fell with T. For a given T, Hfi was reduced as dH/dt increased. For large values of dH/dt, Hfi was almost independent of T and dH/dt. Hfi was reproducible to 50 Oe from cycle to cycle except for T ≪1.5°K, where the behavior became more erratic. After the sample was warmed to room temperature, Hfi was reduced. The samples showed hysteresis in the magnetization. Flux jumping occurred around the hysteresis loop; the values of field at which flux jumps occurred were reproducible from cycle to cycle. The field interval Δ between flux jumps had a temperature dependence similar to Hfi; Δ is slightly reduced for large values of the applied magnetic field. The size of the flux jumps were also reduced for large values of magnetic field. For small values of T, the flux jumping behavior became erratic. Measurements of the critical field and transition temperature have been made using a low‐frequency mutual‐inductance technique. The critical field, that is the magnetic field for the normal‐superconducting transition, for a sample with a 65‐Å pore diameter was 25 770 Oe at 2.67°K. At a reduced temperature of 0.6°K, samples with pore diameters of 65, 117, and 250 Å have critical fields of 156, 102, and 39 times the critical field of bulk indium (176 Oe). The transition temperatures for the samples were 4.24°, 4.04°, an-nd 3.61°K, respectively, compared with 3.408°K for bulk indium. The over‐all behavior of these samples was similar to inhomogeneous type II superconductors.
机译:合成高场超导体的制备方法是,在高达70000 psi的压力下,用铟浸渍各种孔径的多孔玻璃。测量样品的初始磁化强度中发生第一通量跳跃的磁场Hfi作为温度T和磁场扫描速率dH / dt的函数。 dH / dt的值在24到375 Oe / sec之间。对于给定的dH / dt值,Hfi最初随着T的降低而增加,达到最大值,最后随着T的下降而下降。对于给定的T,Hfi随dH / dt的增加而降低。对于大的dH / dt值,Hfi几乎与T和dH / dt无关。除T ≪1.5°K外,Hfi的循环周期可重现至50 Oe,此时行为变得更加不稳定。将样品加热到室温后,降低Hfi。样品在磁化中显示出磁滞。磁通跳跃发生在磁滞回线附近;周期之间可重现发生磁通跳跃的场值。磁通跳跃之间的磁场间隔Δ具有与Hfi相似的温度依赖性。对于较大的施加磁场值,Δ会稍微减小。对于较大的磁场值,磁通跳跃的大小也减小了。对于较小的T值,通量跳跃行为变得不稳定。临界场和转变温度的测量是使用低频互感技术进行的。孔径为65Å的样品在2.67°K时的临界场(即正常超导转变的磁场)为25770 Oe。在0.6°K的降低温度下,孔径为65、117和250的样品的临界场为本体铟(176 Oe)临界场的156、102和39倍。样品的转变温度分别为4.24°,4.04°和3.61°K,而散装铟的转变温度为3.408°K。这些样品的总体行为类似于不均匀的II型超导体。

著录项

  • 来源
    《Journal of Applied Physics》 |1966年第2期|共9页
  • 作者

    Watson J. H. P.;

  • 作者单位

    Research and Development Laboratory, Corning Glass Works, Corning, New York;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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