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首页> 外文期刊>Journal of Applied Physics >Optical Quenching of Photoconductivity in CdS and ZnS Crystals
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Optical Quenching of Photoconductivity in CdS and ZnS Crystals

机译:CdS和ZnS晶体中光电导的光猝灭

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摘要

The optical quenching spectrum in CdS and ZnS single crystals has been investigated as a function of temperature, using a high‐resolution monochromator and polarized light. The well‐known spectrum in both materials consists of a narrow band with maximum at about 0.9 eV and a broader band with onset at about 1.1 eV. Poorly resolved fine structure was detected in the 0.9 eV band in CdS between 0.83 and 0.92 eV; no fine structure was detected in the higher‐energy band. No fine structure could be detected in the less accurate measurements on ZnS. No polarization effects of any kind were detected in either material. Studies of the temperature dependence of optical quenching confirm the early indications described by Bube, and indicate anew the intrinsically complex nature of the sensitizing center. The problems related to distinguishing between intrinsic‐defect and copper‐impurity effects are discussed.
机译:使用高分辨率的单色仪和偏振光,研究了CdS和ZnS单晶中的光学猝灭光谱随温度的变化。两种材料中的众所周知的光谱都由一个窄带和一个宽谱带组成,该窄带的最大值约为0.9 eV,而宽谱带的起始波长约为1.1 eV。在0.83至0.92 eV之间的CdS中的0.9 eV谱带中检测到不良的精细结构;在高能带中未检测到精细结构。在ZnS上精度较低的测量中无法检测到精细结构。在这两种材料中均未检测到任何极化效应。对光学猝灭的温度依赖性的研究证实了布贝(Bube)所描述的早期迹象,并再次表明了敏化中心的内在复杂性。讨论了与区分固有缺陷效应和铜杂质效应有关的问题。

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  • 来源
    《Journal of Applied Physics 》 |1967年第13期| 共7页
  • 作者单位

    Department of Materials Science, Stanford University, Stanford, California;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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