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Temperature Changes in Thin Metal Films during Vapor Deposition

机译:气相沉积过程中金属薄膜的温度变化

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摘要

The temperature increase in vacuum‐evaporated films of Au and Ag was measured by allowing the evaporant to condense on the junctions of Au‐Ni thin‐film thermocouples connected in series. The (minimum) average film temperature during growth was found to depend upon the evaporation rate and the substrate temperature. The average temperature of thin films of Au and Ag during deposition can be some 400°–500°K higher than the substrate temperature; this increase is attributed to the exothermic heat of condensation and radiation heating from the evaporation source. Even at low substrate temperatures near 100°K, the average film temperature can approach 500°K. The significant temperature existing in evaporated thin films can explain grain growth phenomena and other metallurgical changes in the structure of the films.
机译:通过使蒸发剂在串联的Au-Ni薄膜热电偶的结点处冷凝来测量Au和Ag真空蒸发膜的温度升高。发现生长期间的(最低)平均膜温度取决于蒸发速率和衬底温度。沉积过程中金和银薄膜的平均温度可能比衬底温度高约400°–500°K;这种增加归因于冷凝的放热和来自蒸发源的辐射热。即使在接近100°K的低基板温度下,平均薄膜温度也可能接近500°K。蒸发薄膜中存在的显着温度可以解释晶粒长大现象以及薄膜结构中的其他冶金变化。

著录项

  • 来源
    《Journal of Applied Physics 》 |1967年第13期| 共6页
  • 作者

    Belous M. V.; Wayman C. M.;

  • 作者单位

    Kiev Polytechnic Institute, Kiev, U.S.S.R.;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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