Electron and Hole‐Capture Coefficient of Indium in Silicon at Low Temperatures

摘要

This paper describes conductivity, Hall effect, and noise measurements of partially compensated In‐doped Si‐samples at low temperatures. The samples were p‐type in the dark and became n‐type when illuminated. Hole concentration of the unilluminated samples and electron concentration of the illuminated sample were determined from the Hall coefficients. Mobilities were then derived from the conductivities. Capture coefficients for holes and electrons were obtained by noise measurements as function of frequency resulting in γp=≃10-6 cm3 sec-1 and γn≃10-11 cm3 sec-1. The I‐V characteristic of illuminated samples between p+‐contacts was measured. Its analysis also furnished values for the electron‐capture coefficient.