Laser writing and erasing on chalcogenide films

摘要

Optical switching from the mostly crystalline to the amorphous state has been studied in TeGeAs alloy films using ∼ 5‐nsec pulses from a nitrogen laser pumped dye laser. These ``reverse‐mode'''' written spots were switched (erased) by both optical and thermal means. Microscopic examination of the films, thermally crystallized before optical writing, indicates the existence of a two‐phase system consisting of Te crystallites in a background of amorphous Ge‐rich material. A similar condition is again found after a write‐erase cycle has occurred. Computer calculations on the thermal history of the crystalline film resulting from a 5‐nsec pulse indicate initial cooling rates of the order of 1010°C/sec.