Photoluminescence of ion‐implantation‐damaged n‐type GaAs

摘要

The effect of neon implants on the photoluminescence spectrum of heavily doped n‐type GaAs has been determined. A large decrease in the photoluminescence efficiency is observed upon implantation, the magnitude of which depends on the ion dose and excitation wavelength. A model which explains the decrease in minority carrier lifetime and, therefore, the bulk quantum efficiency, is presented. The wavelength dependence is explained by the degree of overlap between the optical absorption length and the ion range.