The temperature dependence of the electrical properties of a series of widely varying conductivity crystals of AgInSe2 is presented. The room‐temperature electron concentration can be varied from greater than 1018 cm-3 to less than 1012 cm-3. The room‐temperature carrier concentration can be reduced below ∼1017 cm-3 by annealing in Se, which however produces undesirable effects on the electron mobility. The conductivity is dominated by shallow donors (binding energy less than 20 meV) which are probably extrinsic impurities.
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