Discussion of the surface‐potential fluctuations caused by oxide‐charge fluctuations

摘要

Experimental values of the standard deviation σs of fluctuations of surface potential are discussed. A comparison is made between the experiments and the theory of Nicollian and Goetzberger recently generalized by the mathematical model of Brews. We conclude that Brews's model adequately represents most of the data, provided both positive and negative fixed charges are assumed to be present simultaneously in our devices.