Theoretical transducer properties of piezoelectric insulator FET transducers

摘要

An oriented piezoelectric film incorporated in the insulator region of a silicon insulated‐gated field‐effect transistor (FET) results in a sensitive high‐frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response—ultimately by the channel transit time. This frequency can extend to the GHz range. The low‐frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.