Decrease in the void growth rate by interstitial trapping

摘要

Void growth during neutron or charged‐particle irradiation at temperatures in the range 0.4Tm⩽T⩽0.6Tm is described in pure metals and in metals containing impurities which trap interstitials. It is shown that the equations for the steady state can be integrated analytically. For cases in which strong trapping occurs the recombination rate is enhanced and the rate of void growth is reduced. A discussion of how strong trapping can be achieved is given.