Effect of elastic uniaxial strain on the electrical resistance of In2Bi single‐crystal whiskers

摘要

Eight single‐crystal whiskers of In2Bi with 〈001〉 orientations, grown by the squeeze technique, were elastically strained up to 0.7% of their lengths while measuring the voltage across the current‐carrying whisker. The strain‐resistance (ϵ‐R) coefficient was found to be characterized by the relation ΔR/Rϵ=a+bϵ, where a=8.94±0.26 and b=175±20.