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Effect of the electric arc and the ambient air on the contact resistance of silver, tungsten, and silver‐tungsten contacts

机译:电弧和环境空气对银,钨和银-钨触点的接触电阻的影响

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Contact pairs of Ag, W, and Ag‐W were operated 6000 times in a 20‐A 110‐V ac circuit. The effect of contact‐resistance change was observed by measuring the temperature rise (TR) at the fixed contact while passing the steady‐state 20 A. The TR was measured before the switching had begun and after each 1000 operations. A large number of contact pairs were used in order to ensure a good statistical interpretation of the data. The chemical composition of the contact surfaces was measured using a Debye‐Scherer x‐ray analysis. The distribution of contact resistance for Ag contacts remained the same throughout the experiment. For W contacts, the distribution was initially higher than that for Ag: the result of conductivity and hardness differences. During the switching experiments, the formation of tungsten oxides on the contact surface resulted in high contact‐resistance values. For Ag‐W, the distribution was initially closer to that for Ag contacts: the result of a thin surface layer of Ag on the Ag‐W. During the switching, the Ag‐W contact‐resistance distribution gradually increased in dispersion and had higher values than those measured for W contacts. The x‐ray data showed that not only were tungsten oxides formed, but also there was a high probability that some of the free Ag on the contact surface formed an insulating silver tungstate.
机译:Ag,W和Ag‐W接触对在20A 110V交流电路中工作了6000次。通过测量经过20 A稳态时固定触点的温升(TR),可以观察到接触电阻变化的影响。TR是在切换开始之前和每1000次操作之后进行测量的。为了确保对数据进行良好的统计解释,使用了大量的接触对。使用Debye-Scherer X射线分析仪测量了接触表面的化学成分。在整个实验中,Ag触点的接触电阻分布保持相同。对于W触点,其分布最初高于Ag:电导率和硬度差异的结果。在开关实验期间,在接触表面上形成氧化钨会导致较高的接触电阻值。对于Ag-W,最初的分布更接近于Ag触点:这是Ag-W上的Ag薄表面层的结果。在切换过程中,Ag-W接触电阻分布的色散逐渐增加,并且其值高于为W接触测量的值。 X射线数据表明,不仅形成了氧化钨,而且接触面上的一些游离Ag极有可能形成绝缘的钨酸银。

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    《Journal of Applied Physics》 |1976年第8期|P.3438-3443|共6页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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