Time‐delayed laser oscillation of a DH diode having an unpumped region

摘要

An AlxGa1-xAs‐AlyGa1-yAs double‐heterostructure (DH) superluminescent diode (SLD) having an unpumped absorbing region has shown laser oscillation with a long time delay, amounting to as much as microseconds at a low pumping level. It has been confirmed that this lasing is made possible by two types of band‐gap shrinkage, one resulting from the many‐body interaction of excited carriers and the other from the temperature rise in the excited region.