Photoelectric properties of ZnSe/GaAs heterojunctions prepared by the close‐spaced technique

摘要

Heterojunctions between n‐ZnSe layers and p‐GaAs substrates have been prepared by the close‐spaced technique. The treatment of the diodes with Zn vapor has improved the spectral response as well as photoelectric conversion efficiency. These effects are explained by the reduction in the resistivity of the ZnSe layers. The best device demonstrates a nearly flat photoresponse spectrum ranging from 470 to 830 nm and a conversion efficiency of ∼5% under the solar irradiation (82 mW/cm2).