Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy

摘要

A new deep level transient spectroscopy technique is presented to determine capture cross sections at metal‐oxide semiconductor (MOS) surface states. The technique enables us to determine energy and temperature dependences of capture cross sections separately. Applying this method, electron capture cross sections at surface states in Si MOS diodes were measured and found to have strong energy dependence and rather weak temperature dependence. It was also found that there was an effect to increase the emission rate, which may be attributed to barrier lowering at the Si‐SiO2 interface.