The reaction of fluorine atoms with silicon

摘要

Fluorine atoms etch silicon with a rate, RF(Si) = 2.91±0.20×10-12T1/2nFe-0.108 eV/kT Å/min, where nF (cm-3) is the atom concentration. This etching is accompanied by a chemiluminescent continuum in the gas phase which exhibits the same activation energy. These phenomena are described by the kinetics: (1) F(g)+Sisurf→SiF2(g), (2) SiF2(g) +F(g) →SiF*3(g), (3) SiF2(g) +F2(g) →SiF*3(g) +F(g), (4) SiF*3(g) →SiF3(g) +hνcontinuum where formation of SiF2 is the rate‐limiting step. A detailed model of silicon gasification is presented which accounts for the low atomic fluorine reaction probability (0.00168 at room temperature) and formation of SiF2 as a direct product. Previously reported etch rates of SiO2 by atomic fluorine are high by a constant factor. The etch rate of SiO2 is RF(SiO2) = (6.14±0.49)×10-13nF T1/2e-0.163/kT Å/min and the ratio of Si to SiO2 etching by F atoms is (4.74±0.49)e-0.055/kT.