Field‐assisted thermally stimulated current of mobile ions in a dielectric layer of a metal–oxide–semiconductor structure

摘要

A field‐assisted thermally stimulated ionic current method has been used to investigate the transient currents associated with mobile ions in dielectric layers of metal‐oxide‐semiconductor (MOS) structures. Assuming Poole–Frenkel effect, an interface trapping model has been used to analyze J–V curves. Using a ramp voltage, analytic expressions for normalized J–V curves are obtained. The single energy model and distributed energy model have been analyzed. The most probable trapping depth of mobile ions, attempt‐to‐escape frequency and trapping energy distribution of mobile ions may be determined from J–V curves. The experimental results are consistent with theoretical calculations.