Copper electromigration in polycrystalline copper sulfide

摘要

Measurements of the electrochemical potential distribution on polycrystalline Cu2‐αS have been made. It was found that the basic transport mechanism for ionic conduction at temperatures between 25–70 °C for single phase chalcocite can be modeled as a vacancy mechanism. The chemical diffusion coefficient of copper in coper sulfide depends on the stoichiometry of the material and exhibit Arrhenius‐type activated temperature dependence with the activation energy Ea=0.45 eV.