Some characteristics of In‐diffused CuInSe2 homojunctions

摘要

CuInSe2 homojunctions have been fabricated by diffusing indium (at 200 °C) into p‐type monocrystalline samples. The electrical and photovoltaic properties of the junctions were investigated at room temperature. The majority carrier concentration distribution in the p‐type side of the junction was determined from differential capacitance measurements.