InGaAsP p‐i‐n photodiodes for optical communication at the 1.3‐μm wavelength

摘要

The preparation and properties of Cd‐diffused p‐n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3‐μm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3‐μm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3‐dB bandwidth of 5.5 GHz were achieved.