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首页> 外文期刊>Journal of Applied Physics >Composition and phase dependence of the intrinsic and extrinsic piezoelectric activity of domain engineered (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 crystals
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Composition and phase dependence of the intrinsic and extrinsic piezoelectric activity of domain engineered (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 crystals

机译:域工程(1-x)Pb(Mg1 / 3Nb2 / 3)O3-xPbTiO3晶体的本征和非压电活性的组成和相位依赖性

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摘要

The piezoelectric response of [001] poled domain engineered (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) crystals was investigated as a function of composition and phase using Rayleigh analysis. The results revealed that the intrinsic (reversible) contribution plays a dominant role in the high piezoelectric activity for PMN-PT crystals. The intrinsic piezoelectric response of the monoclinic (MC) PMN-xPT crystals, 0.31≤x≤0.35, exhibited peak values for compositions close to R-MC and MC-T phase boundaries, however, being less than 2000 pC/N. In the rhombohedral phase region, x≤0.30, the intrinsic piezoelectric response was found to increase as the composition approached the rhombohedral-monoclinic (R-MC) phase boundary. The maximum piezoelectric response was observed in rhombohedral PMN-0.30PT crystals, being on the order of 2500 pC/N. This ultrahigh piezoelectric response was determined to be related to the high shear piezoelectric activity of single domain state, corresponding to an ease in polarization rotation, for compositions close to a morphotropic phase boundary (MPB). The role of monoclinic phase is only to form a MPB with R phase, but not directly contribute to the ultrahigh piezoelectric activity in rhombohedral PMN-0.30PT crystals. The extrinsic contribution to piezoelectric activity was found to be less than 5% for the compositions away from R-MC and MC-T phase boundaries, due to a stable domain engineered structure. As the composition approached MPBs, the extrinsic contribution increased slightly (<10%), due to the enhanced motion of phase boundaries.
机译:使用瑞利分析法研究了[001]极化畴工程(1-x)Pb(Mg1 / 3Nb2 / 3)O3-xPbTiO3(PMN-PT)晶体的压电响应,作为成分和相位的函数。结果表明,固有的(可逆的)贡献在PMN-PT晶体的高压电活性中起主要作用。单斜晶(MC)PMN-xPT晶体的本征压电响应(0.31≤x≤0.35)在接近R-MC和MC-T相界的范围内表现出峰值,但小于2000 pC / N。在x≤0.30的菱面体相区域中,发现固有压电响应随着组成接近菱面体单斜晶(R-MC)相界而增加。在菱面体PMN-0.30PT晶体中观察到最大的压电响应,约为2500 pC / N。对于接近趋晶相边界(MPB)的成分,该超高压电响应被确定与单畴态的高剪切压电活性有关,这与极化旋转的容易程度相对应。单斜晶相的作用仅是形成具有R相的MPB,而不能直接促进菱形PMN-0.30PT晶体的超高压电活性。发现由于稳定的域工程结构,对于远离R-MC和MC-T相界的组合物,压电活性的外在贡献小于5%。当组成接近MPB时,由于相界运动的增强,外部贡献略有增加(<10%)。

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