...
首页> 外文期刊>Journal of Applied Physics >Composition and phase dependence of the intrinsic and extrinsic piezoelectric activity of domain engineered (1-x)Pb(Mg_(1/3)Nb_(2/3))O_3 -xPbTiO_3 crystals
【24h】

Composition and phase dependence of the intrinsic and extrinsic piezoelectric activity of domain engineered (1-x)Pb(Mg_(1/3)Nb_(2/3))O_3 -xPbTiO_3 crystals

机译:域工程(1-x)Pb(Mg_(1/3)Nb_(2/3))O_3 -xPbTiO_3晶体的本征和非压电活性的组成和相位依赖性

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The piezoelectric response of [001] poled domain engineered (1-x)Pb(Mg_(1/3)Nb_(2/3))O_3-xPbTiO_3 (PMN-PT) crystals was investigated as a function of composition and phase using Rayleigh analysis. The results revealed that the intrinsic (reversible) contribution plays a dominant role in the high piezoelectric activity for PMN-PT crystals. The intrinsic piezoelectric response of the monoclinic (M_C) PMN-xPT crystals, 0.31 vx≤ 0.35, exhibited peak values for compositions close to R-M_C and M_C-T phase boundaries, however, being less than 2000 pC/N. In the rhombohedral phase region, x≤0.30, the intrinsic piezoelectric response was found to increase as the composition approached the rhombohedral-monoclinic (R-M_C) phase boundary. The maximum piezoelectric response was observed in rhombohedral PMN-0.30PT crystals, being on the order of 2500 pC/N. This ultrahigh piezoelectric response was determined to be related to the high shear piezoelectric activity of single domain state, corresponding to an ease in polarization rotation, for compositions close to a morphotropic phase boundary (MPB). The role of monoclinic phase is only to form a MPB with R phase, but not directly contribute to the ultrahigh piezoelectric activity in rhombohedral PMN-0.30PT crystals. The extrinsic contribution to piezoelectric activity was found to be less than 5% for the compositions away from R-M_C and M_C-T phase boundaries, due to a stable domain engineered structure. As the composition approached MPBs, the extrinsic contribution increased slightly (<10%), due to the enhanced motion of phase boundaries.
机译:使用瑞利技术研究了[001]极化畴工程(1-x)Pb(Mg_(1/3)Nb_(2/3))O_3-xPbTiO_3(PMN-PT)晶体的压电响应随成分和相位的变化分析。结果表明,固有的(可逆的)贡献在PMN-PT晶体的高压电活性中起主要作用。单斜(M_C)PMN-xPT晶体的本征压电响应为0.31vx≤0.35,在接近R-M_C和M_C-T相界的情况下显示出峰值,但小于2000 pC / N。在x≤0.30的菱面体相区域中,发现固有压电响应随着组成接近菱面体-单斜晶(R-M_C)相边界而增加。在菱面体PMN-0.30PT晶体中观察到最大的压电响应,约为2500 pC / N。对于接近趋晶相边界(MPB)的成分,该超高压电响应被确定与单畴态的高剪切压电活性有关,这与极化旋转的容易程度相对应。单斜晶相的作用仅是形成具有R相的MPB,而不能直接促进菱形PMN-0.30PT晶体的超高压电活性。由于稳定的畴工程结构,对于远离R-M_C和M_C-T相界的组合物,发现对压电活性的外在贡献小于5%。当组成接近MPB时,由于相界运动的增强,外部贡献略有增加(<10%)。

著录项

  • 来源
    《Journal of Applied Physics》 |2010年第3期|P.034106.1-034106.9|共9页
  • 作者单位

    Materials Research Institute, Pennsylvania State University, University park, Pennsylvania 16802, USA Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi 'an Jiaotong University, Xi'an 710049, People's Republic of China;

    Materials Research Institute, Pennsylvania State University, University park, Pennsylvania 16802, USA;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi 'an Jiaotong University, Xi'an 710049, People's Republic of China;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi 'an Jiaotong University, Xi'an 710049, People's Republic of China;

    TRS Technologies, Inc., 2820 East College Avenue, State College, Pennsylvania 16801, USA;

    Materials Research Institute, Pennsylvania State University, University park, Pennsylvania 16802, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号