Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon

摘要

The effect of vacancies introduced by rapid thermal annealing (RTA) on the oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. GCZ silicon is annealed at 650–1050 °C to facilitate the precipitation of oxygen. It is observed that the oxygen precipitation in silicon is enhanced by both the vacancies introduced during RTA pretreatment and the doping of germanium. Especially, we find that the enhancement effect of vacancies on the precipitation of oxygen is larger than that of germanium atoms. In contrast to non-RTA pretreatments, RTA pretreatments lead to less significant oxygen precipitation in GCZ silicon than in conventional Czochralski (CZ) silicon at temperatures ranging from 850 to 950 °C. The mechanism for the interaction between vacancies and germanium atoms in CZ silicon is elucidated.