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首页> 外文期刊>Journal of Applied Physics >Analysis of optical properties of porous silicon nanostructure single and gradient-porosity layers for optical applications
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Analysis of optical properties of porous silicon nanostructure single and gradient-porosity layers for optical applications

机译:用于光学应用的多孔硅纳米结构单层和梯度多孔层的光学性能分析

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摘要

The porous silicon (PS) layers with different porosities were prepared by electrochemical anodization method to obtain the desired refractive index in a given range. The optical response of the PS layer has been performed by the reflectance measurements. The obtained data were coupled to Kramers-Kronig analysis and allowed determination of complex refractive index in spectral range extending from 400 to 850 nm. In addition, the dispersion of refractive index of PS was determined from optical reflection measurements experimentally utilizing the relationship between the optical path in the plane-parallel film and the position of extrema. These results were compared and the agreement of them was discussed. The Bruggeman’s effective medium approximation was also used to estimate the porosity of each PS sample from calculated optical characteristics. FESEM analyses revealed vertically aligned silicon nanopillars with diameters on the order of 50 nm perpendicular to the Si substrate surface. A gradient-porosity PS layer was fabricated by modulating applied current density during anodization. Indeed, the elaborated structure is consisted of porous layers with modulated refractive indices. For this structure, normal incident and reflecting light through the layers provide an effective refractive index.
机译:通过电化学阳极氧化方法制备具有不同孔隙率的多孔硅(PS)层,以在给定范围内获得所需的折射率。 PS层的光学响应已通过反射率测量执行。将获得的数据与Kramers-Kronig分析耦合,并可以确定从400至850nm的光谱范围内的复折射率。另外,利用平面平行膜中的光路与极值位置之间的关系,通过实验上的光反射测定来求出PS的折射率的色散。比较了这些结果并讨论了它们的一致性。布鲁格曼的有效介质近似法还用于根据计算出的光学特性估算每个PS样品的孔隙率。 FESEM分析显示垂直排列的硅纳米柱,其垂直于Si衬底表面的直径约为50 nm。通过在阳极氧化过程中调节施加的电流密度来制备梯度孔隙率PS层。实际上,精心制作的结构由折射率可调的多孔层组成。对于这种结构,穿过层的法向入射和反射光提供有效的折射率。

著录项

  • 来源
    《Journal of Applied Physics》 |2012年第5期|p.053506.1-053506.6|共6页
  • 作者单位

    Department of Electrical and Computer Engineering, Khomeinishahr Branch, Islamic Azad University, Isfahan, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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