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Aligned semiconducting single-walled carbon nanotubes: Semi-analytical solution

机译:取向半导体单壁碳纳米管:半解析解

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摘要

This paper presents a semi-analytical model to study coupling between adjacent semiconducting single-walled carbon nanotubes (s-SWCNT) and its effect on the energy band gap. A potential function is proposed to describe the charge density distribution of s-SWCNT based on the continuum model. The potential function is then used in solving Schrödinger's equation to obtain the ground state probability wave function for one s-SWCNT and aligned bundle of s-SWCNTs. Then, a parametric study of energy band gap is developed by varying the distance between adjacent s-SWCNTs and applying transverse electric field across the bundle axis. The energy band gap of aligned s-SWCNTs is 10% less than one s-SWCNT. When the distance (d) between the adjacent s-SWCNTs is increased, the change of the energy band gap vanishes. By applying transverse electric field, the energy band gap may reduce by as much as 20% and vanishes with the increase of d.
机译:本文提出了一个半分析模型,以研究相邻的单壁碳纳米管(s-SWCNT)之间的耦合及其对能带隙的影响。基于连续模型,提出了一种势函数来描述s-SWCNT的电荷密度分布。然后将势函数用于求解薛定er方程,以获得一个s-SWCNT和对齐的s-SWCNT束的基态概率波函数。然后,通过改变相邻s-SWCNT之间的距离并在束轴上施加横向电场来开发能带隙的参数研究。对齐的s-SWCNT的能带隙比一个s-SWCNT小10%。当相邻的s-SWCNT之间的距离(d)增加时,能带隙的变化消失。通过施加横向电场,能带隙可以减少多达20%,并且随着d的增加而消失。

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