Electronic transport and shot noise in Thue-Morse sequence graphene superlattice

摘要

The transport properties and shot noise in Thue-Morse (TM) sequence graphene superlattice are investigated using transfer matrix methods. The results indicate perfect transport with T = 1 is always obtained at normal incidence when incident electrons tunnel through different barrier widths and heights. The zero- style='border-top:solid 1px black;'>k-gap and other Bragg gap exhibit different behavior as the barrier width or incident angle increases. Furthermore, the changing of the structure parameters and generation of the TM sequence has a great effect on transmission coefficient, conductance, and Fano factor. It is shown that the Fano factor has a maximum close to 1/3 in the vicinity of Dirac point, which result in robust electronic transport properties.