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机译:尺寸受控的硅纳米晶体中的施主电离:从缺陷钝化到自由电子生成的过渡
Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL, United Kingdom;
Auger effect; carrier density; charge compensation; dangling bonds; electron-hole recombination; elemental semiconductors; energy gap; ion implantation; nanofabrication; nanostructured materials; passivation; phosphorus; photoluminescence; rapid thermal annealing; segregation; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; silicon compounds; solid-state phase transformations; spectral line shift; transmission electron microscopy; 6146-w; 6172U-; 7855Ap; 7866Db; 8116-c; 8165Rv;
机译:尺寸受控的硅纳米晶体中的施主电离:从缺陷钝化到自由电子生成的过渡
机译:通过等离子体增强化学气相沉积法在无氮二氧化硅基质中形成尺寸受控的硅纳米晶体
机译:通过等离子体增强化学气相沉积法在无氮二氧化硅基质中形成尺寸受控的硅纳米晶体
机译:P供体的氢钝化和激光烧蚀合成的P掺杂硅纳米线中的缺陷
机译:硅纳米晶体和缺陷状态在硅富硅氮化硅中用于光电应用
机译:缺陷诱导发光猝灭与掺入硅纳米晶体中的磷的电荷载流子生成随尺寸的变化
机译:尺寸受控的硅纳米晶体中的施主电离:从缺陷钝化到自由电子生成的过渡