Photonic microdisk resonators in aluminum nitride

摘要

We demonstrate integrated photonic microdisk resonators in sputtered c-axis oriented aluminum nitride (AlN) films. A 400 nm thick layer of AlN was patterned in a single lithography step with silicon dioxide used for the top and bottom cladding layers. AlN disks with a radius of 20 μm at various spacings to an 850 nm wide waveguide were tested. A loaded quality factor of 28 350 is shown in these microdisks, with an extracted peak shift over power ratio of 0.0495 pm/μW. The demonstration of photonic resonators in a piezoelectric material can lead to novel optomechanical functionalities.