Novel attributes in modeling and optimizing of the new graphene based InxGa1−xN Schottky barrier solar cells

摘要

Based on the ability of InxGa1−xN materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type InxGa1−xN with low indium contents and interfacing with graphene film (G/InxGa1−xN), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-InxGa1−xN showed relatively smaller short-circuits current (∼7 mA/cm2) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-InxGa1−xN and graphene work function were found to substantially affect the performance of G/p-InxGa1−xN.