首页> 外文期刊>Journal of Applied Physics >Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GalnN light-emitting diodes
【24h】

Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GalnN light-emitting diodes

机译:由图案化的渐变折射率涂层组成的光学功能表面,可增强GalnN发光二极管的光提取

获取原文
获取原文并翻译 | 示例
       

摘要

Graded-refractive-index (GRIN) coatings, composed of multiple dielectric layers of TiC>2 and SiC>2 are sputter-deposited on the nitrogen-face of thin-film GalnN/GaN light emitting diodes (LEDs). The thickness and refractive index of each layer in the GRIN stack is designed to minimize light trapping inside the LED caused by total internal reflection at the semiconductor-air interface. Patterning the GRIN stack forms an optically functional surface, which converts trapped modes of light into desirable extracted modes that have preferential directions. Inductively coupled-plasma reactive-ion-etching is used to fabricate various patterns, including arrays of cylindrical pillars and diamond-shaped pillars on the GRIN coatings. In comparison to an uncoated planar reference device, the light-output power is enhanced by 131% and 104% for an array of GRIN diamond-shaped pillars and an array of GRIN cylindrical pillars, respectively. This enhancement in light-output power is comparable to N-face roughened LEDs, which show an enhancement of 124%. In addition, the peak emission intensity of the GRIN LEDs with an array of GRIN pillars is between 25° and 55° off-surface-normal.
机译:由TiC> 2和SiC> 2的多个介电层组成的渐变折射率(GRIN)涂层被溅射沉积在薄膜GalnN / GaN发光二极管(LED)的氮面上。 GRIN堆栈中每一层的厚度和折射率均经过了设计,以最大程度地减少由半导体-空气界面处的全内反射引起的LED内部陷光。对GRIN堆栈进行构图可形成光学功能表面,该表面可将捕获的光模式转换为具有优先方向的理想提取模式。电感耦合等离子体反应离子刻蚀用于制造各种图案,包括GRIN涂层上的圆柱状柱状和菱形柱状阵列。与未镀膜的平面参考设备相比,阵列GRIN菱形柱和阵列GRIN圆柱柱的光输出功率分别提高了131%和104%。光输出功率的这种增强可与N面粗糙LED相比,后者显示出124%的增强。此外,带有GRIN柱阵列的GRIN LED的峰值发射强度在离表面法线25°至55°之间。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第v110n5期|p.054510.1-054510.5|共5页
  • 作者单位

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    R&D Institute, Samsung LED, Suwon 443-744, South Korea;

    R&D Institute, Samsung LED, Suwon 443-744, South Korea;

    Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:58:34

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号