Excitations in doped quantum dot induced by accelerating impurity center

摘要

We explore the excitation profile of a repulsive impurity doped quantum dot induced by drift of accelerating dopant. The acceleration begins as the velocity of the drifting dopant changes randomly with time. We have considered Gaussian impurity centers. The investigation reveals the roles subtly played by the region of influence of the dopant in conjunction with the dopant strength to modulate the excitation pattern. The investigation also reveals a change in the relative dominance of various factors in influencing the excitation rate as dopant strength increases. The findings seem to be important in the field of impurity diffusion in nanodevices.